연도 2019 
저널명 Scientific Reports 

저자: Wan-Ook Ji, Min-Ho Lee, Gon-Ho Kim & Eun-Hee Kim 


Abstract

Effect of Ge2Sb2Te5 (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ionenhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions. 


doi: https://doi.org/10.1038/s41598-019-56160-0

연도 저널명 제목 조회 수
2024  Current Applied Physics  Observation of the floating sheath distribution on Al2O3 and silicon targets adjacent to a DC biased metal substrate 35
2022  Current Applied Physics  Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma 261
2022  Plasma Sources Science and Technology  Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma file 339
2022  Journal of Alloys and Compounds  Competitive roles of dislocations on blister formation in polycrystalline pure tungsten file 431
2022  Journal of the Korean Physical Society  Plasma Information-based virtual metrology (PI-VM) and mass production process control file 638
2022  Physics of Plasma  2022 Review of Data-Driven Plasma Science file 798
2021  Journal of the Korean Physical Society  Phenomenology-based Model Predictive Control of Electron Density in Ar/SF6 Capacitively Coupled Etch Plasma 321
2021  Current Applied Physics  Development of Model Predictive Control of Fluorine Density in SF6/O2/Ar Etch Plasma by Oxygen Flow Rate 441
2021  Atoms  Population Kinetics Modeling of Low-Temperature Argon Plasma 644
2021  반도체디스플레이기술학회지  VHF-CCP 설비에서 Ar/SF6 플라즈마 분포가 Si 식각 균일도에 미치는 영향 분석 790
2021  Materials  Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma 1656
2020  Physics of Plasmas  Predictive Control of the Plasma Processes in the OLED Display Mass Production Referring to the Discontinuity Qualifying PI-VM 3787
2019  IAEA CRP report  Evaluation of tritium inventory in irradiated tungsten by atomic-scale modeling 600
2019  Current Applied Physics  Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth 624
2019  Scientific Reports  Quantitation of the ROS production in plasma and radiation treatments of biotargets 933

Archives


XE Login