연도 2021 
저널명 Journal of the Korean Physical Society 

doi : 추가예정 (accepted)

 

Authors : Sangwon Ryu, Ji-Won Kwon, Ingyu Lee, Jihoon Park and Gon-Ho Kim

 

Abstract : 

A phenomenology-based model predictive controller (MPC) that controls electron density as desired set-point in Ar/SF6 capacitively coupled etch plasma was developed. In the development of the controller, the control model was established based on the power balance model and the dynamic characteristics of the equipment. The performance of the controller is evaluated through set-point tracking test. It was experimentally shown that the MPC showed better performance compared to proportional integral derivative (PID) controller. It is expected that this will be an element technology of an automated process controller that keep the process plasma in desired condition.

연도 저널명 제목 조회 수
2024  Current Applied Physics  Observation of the floating sheath distribution on Al2O3 and silicon targets adjacent to a DC biased metal substrate 60
2022  Journal of Alloys and Compounds  Competitive roles of dislocations on blister formation in polycrystalline pure tungsten file 437
2022  Physics of Plasma  2022 Review of Data-Driven Plasma Science file 803
2022  Plasma Sources Science and Technology  Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma file 393
2022  Journal of the Korean Physical Society  Plasma Information-based virtual metrology (PI-VM) and mass production process control file 668
2022  Current Applied Physics  Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma 265
2021  Materials  Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma 1658
2021  Atoms  Population Kinetics Modeling of Low-Temperature Argon Plasma 648
2021  Journal of the Korean Physical Society  Phenomenology-based Model Predictive Control of Electron Density in Ar/SF6 Capacitively Coupled Etch Plasma 321
2021  Current Applied Physics  Development of Model Predictive Control of Fluorine Density in SF6/O2/Ar Etch Plasma by Oxygen Flow Rate 441
2021  반도체디스플레이기술학회지  VHF-CCP 설비에서 Ar/SF6 플라즈마 분포가 Si 식각 균일도에 미치는 영향 분석 800
2020  Physics of Plasmas  Predictive Control of the Plasma Processes in the OLED Display Mass Production Referring to the Discontinuity Qualifying PI-VM 3788
2019  Plasma Processes and Polymers  Cause Analysis of the Faults in HARC Etching Processes by Using the PI-VM Model for OLED Display Manufacturing 1307
2019  Plasma Physics and Controlled Fusion  Application of of PI-VM for management of the metal target plasma etching processes in OLED display manufacturing 1112
2019  Current Applied Physics  Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth 624

Archives


XE Login