연도 1992 
저널명 Plasma Sources Science & Technology 
 

The first direct measurement of a collisional Bohm presheath from plasma potential measurements is given. By measuring the presheath thickness in front of a grounded wafer stage, a determination of the collision mean free path for ions in an electron cyclotron resonance etching tool has been made. Presheaths were measured in N2, and CF4, plasma using an emissive probe. The presheath thickness in N2, was found to be linearly dependent on the mean free path. Measurements of CF4, plasmas, for which the collision cross sections are unknown, have shown results similar to those found for nitrogen. This result has enabled an extrapolation to be made of the effective cross section for collisions in plasmas created from CF4.


https://doi.org/10.1088/0963-0252/1/3/001

연도 저널명 제목 조회 수
2024  Current Applied Physics  Observation of the floating sheath distribution on Al2O3 and silicon targets adjacent to a DC biased metal substrate 86
2022  Current Applied Physics  Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma 271
2022  Plasma Sources Science and Technology  Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma file 407
2022  Journal of Alloys and Compounds  Competitive roles of dislocations on blister formation in polycrystalline pure tungsten file 442
2022  Journal of the Korean Physical Society  Plasma Information-based virtual metrology (PI-VM) and mass production process control file 685
2022  Physics of Plasma  2022 Review of Data-Driven Plasma Science file 812
2021  Journal of the Korean Physical Society  Phenomenology-based Model Predictive Control of Electron Density in Ar/SF6 Capacitively Coupled Etch Plasma 321
2021  Current Applied Physics  Development of Model Predictive Control of Fluorine Density in SF6/O2/Ar Etch Plasma by Oxygen Flow Rate 443
2021  Atoms  Population Kinetics Modeling of Low-Temperature Argon Plasma 665
2021  반도체디스플레이기술학회지  VHF-CCP 설비에서 Ar/SF6 플라즈마 분포가 Si 식각 균일도에 미치는 영향 분석 813
2021  Materials  Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma 1661
2020  Physics of Plasmas  Predictive Control of the Plasma Processes in the OLED Display Mass Production Referring to the Discontinuity Qualifying PI-VM 3789
2019  IAEA CRP report  Evaluation of tritium inventory in irradiated tungsten by atomic-scale modeling 601
2019  Current Applied Physics  Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth 630
2019  Scientific Reports  Quantitation of the ROS production in plasma and radiation treatments of biotargets 935

Archives


XE Login