연도 2001 
저널명 Surface & Coating Technology 
 

The internal inductively coupled nitrogen plasma was studied to find optimum conditions of ion species ratio in plasma source ion implantation processes. The ratio of nitrogen ion species, i.e. N2q and Nq, was measured with quadrupole mass analyzer QMA.and a single Langmuir probe. The results of QMA and a single Langmuir probe measurement showed very good agreement and it was shown that a single Langmuir probe could be used to measure the ion species ratio easily. For the confirmation of the measured ion species ratio, nitrogen ions were implanted into Si wafer and scanning Auger analysis was performed to investigate the depth distribution of implanted nitrogen ions.


https://doi.org/10.1016/S0257-8972(00)01037-9

연도 저널명 제목 조회 수
2000  Applied physics letters  Influence of Electrode-Size Effects on Plasma Sheath Expansion 7307
2001  Journal of applied physics  Electrostatic probe diagnostic of a planar type radio-frequency inductively coupled oxgen plasma 5657
2001  IEEE Transactions On Plasma Science  Scaling Characteristics of Plasma Parameters for Low-Pressure Oxygen RF Discharge plasmas 4189
2001  Japanese journal of applied physics  Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate 4942
2001  Surface & Coating Technology  The measurement of nitrogen ion species ratio in the inductively coupled plasma source ion implantation 7063
2001  Surface & Coating Technology  Measurement of sheath expansion in plasma source ion implantation 9767
2001  Journal of the Korean Physical Society  Characterization of Oxygen Plasma by Using the Langmuir Probe in an Inductively Coupled Plasma 16381
2001  Current Applied Physics  Calculation of transport parameters in KT-1 tokamak edge plasma 83235
2002  Surface and Coatings Technology  The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation 5369
2002  Journal of Applied Physics  Measurement of expanding plasma sheath from a target baised by a negative pulse with a fast rise time 103800
2004  Plasma Science, IEEE Transactions on  Analysis of Langmuir Probe Data Using Wavelet Transform 4138
2004  Key Engineering Materials  Measurement of Monodisperse Particle Charge in DC Plasma 6277
2004  Surface and Coatings Technology  Time-resolved plasma measurement in a high-power pulsed ICP source for large area 4512
2006  Transactions on Electrical and Electronic Materials  SF6 and O2 Effects on PR Ashing in N2 Atmospheric Dielectric Barrier Discharge 6052
2006  Contributions to Plasma Physics  In-Situ Method of Monitoring Argon Plasma Density Variation Using Current and Voltage of Flat Antenna in Inductively Coupled Plasma Source 7190

Archives


XE Login