연도 2001 
저널명 Surface & Coating Technology 
 

The internal inductively coupled nitrogen plasma was studied to find optimum conditions of ion species ratio in plasma source ion implantation processes. The ratio of nitrogen ion species, i.e. N2q and Nq, was measured with quadrupole mass analyzer QMA.and a single Langmuir probe. The results of QMA and a single Langmuir probe measurement showed very good agreement and it was shown that a single Langmuir probe could be used to measure the ion species ratio easily. For the confirmation of the measured ion species ratio, nitrogen ions were implanted into Si wafer and scanning Auger analysis was performed to investigate the depth distribution of implanted nitrogen ions.


https://doi.org/10.1016/S0257-8972(00)01037-9

연도 저널명 제목 조회 수
2001  Surface & Coating Technology  The measurement of nitrogen ion species ratio in the inductively coupled plasma source ion implantation 7063
2001  Surface & Coating Technology  Measurement of sheath expansion in plasma source ion implantation 9767
2019  Scientific Reports  Quantitation of the ROS production in plasma and radiation treatments of biotargets 945
2016  Science of Advanced Materials  Characteristics of Molybdenum as a Plasma-Generating Electrode 1869
1993  Review of scientific instruments  Direct Measurement of Plasma Flow Velocity Using a Langmuir Probe 4087
2000  REVIEW OF SCIENTIFIC INSTRUMENTS  Effect of harmonic rf fields on the emissive probe characteristics 5331
2008  Review of Scientific Instruments  Self-consistent circuit model for plasma source ion implantation 6112
2012  PLASMA SOURCES SCIENCE AND TECHNOLOGY  Characteristics of vapor coverage formation on an RF-driven metal electrode to discharge a plasma in saline solution 9622
2017  Plasma Sources Science and Technology  Ion-neutral collision effect on ion-ion two-stream-instability near sheath-presheath boundary in two-ion-species plasmas 3430
2022  Plasma Sources Science and Technology  Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma file 433
1992  Plasma Sources Science & Technology  Measurements of the presheath in an electron cyclotron resonance etching device 4632
2000  Plasma sources science & technology  Asymmetric plasma potential fluctuation in an inductive plasma source 6009
2000  Plasma sources science & technology  Design and operation of an Omegatron mass spectrometer for measurements of positive and negative ion species in electron cyclotron resonance plasmas 4878
2004  Plasma Science, IEEE Transactions on  Analysis of Langmuir Probe Data Using Wavelet Transform 4139
2019  Plasma Processes and Polymers  Cause Analysis of the Faults in HARC Etching Processes by Using the PI-VM Model for OLED Display Manufacturing 1317

Archives


XE Login