Photo Resist (PR) ashi ng process was carried out with the atmospheric pressure - dielectric barrier discharge (ADBD) using SFUN2/0 2. Ashing rate (AR) was sensilive to the mixing ratio of the oxygen and nitrogen of the blower lypc of ADBD asher. The maximum AR of 5000 Almin was achieved at 2 % of oxygen in the N2 plasma. With increasing the oxygen concentration to more than 2 % in the N2 plasma, the discharge becomes weak due to the high electron affinity of oxygen, resulting in the decrease of AR. When adding 0.5 % of SF6 to 02/N2 mixed plasma, the PR AR increased drastically to 9000 A/min and the ashed surface of PR was smoother compared to the processed surface without SF6 . Carbon Fluorinated polymer may passivate the PR surface. It was also observed that the glass surface was not damaged by the fluorine.

10.4313/TEEM.2006.7.4.204