연도 2014 
저널명 반도체디스플레이기술학회지 

Abstract: The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100 MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

연도 저널명 제목 조회 수
1993  Review of scientific instruments  Direct Measurement of Plasma Flow Velocity Using a Langmuir Probe 4156
2000  REVIEW OF SCIENTIFIC INSTRUMENTS  Effect of harmonic rf fields on the emissive probe characteristics 5358
2008  Review of Scientific Instruments  Self-consistent circuit model for plasma source ion implantation 6206
2016  Science of Advanced Materials  Characteristics of Molybdenum as a Plasma-Generating Electrode 1998
2019  Scientific Reports  Quantitation of the ROS production in plasma and radiation treatments of biotargets 1003
1997  Surface & Coating Technology  Polymer Surface Modification by Plasma Source Ion Implantation 6989
2001  Surface & Coating Technology  The measurement of nitrogen ion species ratio in the inductively coupled plasma source ion implantation 7091
2001  Surface & Coating Technology  Measurement of sheath expansion in plasma source ion implantation 9861
2004  Surface and Coatings Technology  Time-resolved plasma measurement in a high-power pulsed ICP source for large area 4669
2002  Surface and Coatings Technology  The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation 5430
2013  Thin Solid Film  Experimental investigation of plasma recovery during the pulse-off time in plasma source ion implantation 3212
2013  Thin Solid Films  Field-emission performance and structural change mechanism of multiwalled carbon nanotubes by oxygen plasma treatment 4219
2010  Thin Solid Films  Effects of argon and oxygen flow rate on water vapor barrier properties of silicon oxide coatings deposited on polyethylene terephthalate by plasma enhanced chemical vapor deposition 8338
2006  Transactions on Electrical and Electronic Materials  SF6 and O2 Effects on PR Ashing in N2 Atmospheric Dielectric Barrier Discharge 6068
2021  반도체디스플레이기술학회지  VHF-CCP 설비에서 Ar/SF6 플라즈마 분포가 Si 식각 균일도에 미치는 영향 분석 994

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