Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth
2019.07.24 12:57
연도 | 2019 |
---|---|
저널명 | Current Applied Physics |
쪽 | 1068-1075 |
Current Applied Physics
Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth
주저자: Yunchang Jang
Y. Jang, et al, Current Applied Physics 19 (2019) 1068–1075