할로겐 플라즈마에 의한 Ge2Sb2Te5 식각 데미지 연구
2020.01.23 10:39
연도 | 2019 |
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저널명 | 반도체디스플레이기술학회지 |
쪽 | 2019, vol.18, no.4, 통권 69호 pp. 35-39 (5 pages) |
doi: 추가예정
주저자:Yun Chang Jang
Abstract
Effect of Ge2Sb2Te5 (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions
and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching,
and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained
according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the
lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ionenhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition
ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The
change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds
with high energy ions over than the activation energy of surface reactions.