연도 2022 
저널명 Journal of Alloys and Compounds 

doi : https://doi.org/10.1016/j.jallcom.2022.165745 0925-8388

 

Authors : Yeonju Oha, Guensik Mina, Ki-Baek Roh, Hwangsun Kim, Hyoung Chan Kim, Gon-Ho Kim, and Heung Nam Han

 

Abstract : 

Dislocation in tungsten is a significant contributing factor to blister formation in terms of both the nucleation and growth of bubbles under high-flux deuterium (D) ion irradiation. Unfortunately, the focus of previous publications was limited to only extreme cases which was either dislocation-rich or recrystallized. Therefore, this study aims to further improve the understanding of the microstructure dependence of blister formation in pure tungsten based on a more detailed comparison. The modification of the surface structure after D exposure has been investigated using various tungsten specimens with individual dislocation densities introduced by different annealing processes. The experimental results demonstrated that the number density of blisters and D retention increased with decreasing dislocation density, but decreased again when the tungsten material was fully recrystallized. Such an unexpected appearance of blisters was understood based on the competitive roles of intrinsic dislocations in blister formation by three aspects: trapping site, diffusion channel, and trigger of local plastic deformation necessary for blister growth. It was finally concluded that the dislocation mainly acted as a diffusion channel under the present exposure conditions wherein the irradiation temperature was quite high and the exposed materials possessed the recovered dislocation structure, thereby resulting in the acceleration of blister formation with decreasing dislocation density due to the lowered out-diffusion rate of D. However, in recrystallized tungsten, blister formation was restrained by the poor plasticity as well as the complete lack of trap sites.

연도 저널명 제목 조회 수
2006  한국진공학회지  PSII 펄스 시스템의 동적 플라즈마 부하 회로 모델 개발 8453
2011  전기전자재료학회논문지  플라즈마 삽입전극의 전류에 미치는 밀도 구배의 영향 2778
2021  반도체디스플레이기술학회지  VHF-CCP 설비에서 Ar/SF6 플라즈마 분포가 Si 식각 균일도에 미치는 영향 분석 838
2019  반도체디스플레이기술학회지  플라즈마 정보인자를 활용한 SiO2 식각 깊이 가상 계측 모델의 특성 인자 역할 분석 1106
2014  반도체디스플레이기술학회지  이중 주파수 전원의 용량성 결합 플라즈마 식각장비에서 전극하전에 의한 입사이온 에너지분포 변화연구 1458
2014  반도체디스플레이기술학회지  좁은 간격 CCP 전원의 전극과 측면 벽 사이 플라즈마 분포 1724
2016  반도체디스플레이기술학회지  헬륨 대기압 유전체 격벽 방전기의 타운젠트–글로우 방전 모드 전이 연구 3586
2019  반도체디스플레이기술학회지  할로겐 플라즈마에 의한 Ge2Sb2Te5 식각 데미지 연구 6845
2006  Transactions on Electrical and Electronic Materials  SF6 and O2 Effects on PR Ashing in N2 Atmospheric Dielectric Barrier Discharge 6051
2013  Thin Solid Films  Field-emission performance and structural change mechanism of multiwalled carbon nanotubes by oxygen plasma treatment 4172
2010  Thin Solid Films  Effects of argon and oxygen flow rate on water vapor barrier properties of silicon oxide coatings deposited on polyethylene terephthalate by plasma enhanced chemical vapor deposition 8226
2013  Thin Solid Film  Experimental investigation of plasma recovery during the pulse-off time in plasma source ion implantation 3149
2004  Surface and Coatings Technology  Time-resolved plasma measurement in a high-power pulsed ICP source for large area 4511
2002  Surface and Coatings Technology  The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation 5365
1997  Surface & Coating Technology  Polymer Surface Modification by Plasma Source Ion Implantation 6959

Archives


XE Login