연도 2022 
저널명 Journal of the Korean Physical Society 
647–669 

DOI : https://doi.org/10.1007/s40042-022-00452-8

 

Authors : Seolhye Park, Jaegu Seong, Yunchang Jang, Hyun-Joon Roh, Ji-Won Kwon, Jinyoung Lee, Sangwon Ryu, Jaemin Song, Ki-Baek Roh, Yeongil Noh, Yoona Park, Yongsuk Jang, Taeyoung Cho, Jae-Ho Yang, and Gon-Ho Kim

 

Abstract :

In this paper, we review the development of plasma engineering technology that improves dramatically the production efficiency of OLED (organic light-emitting diode) displays and semiconductor manufacturing by utilizing a process monitoring methodology based on the physical domain knowledge. The domain knowledge consists of plasma-heating and sheath physics, plasma chemistry and plasma-material surface reaction kinetics, and plasma diagnostics. Based on this, a plasma information-based virtual metrology (PI-VM) algorithm was developed drastically enhanced process prediction performance by parameterizing plasma information (PI) which can trace the states of processing plasmas. PI-VM has superior process prediction accuracy compared to the classical statistics-based virtual metrologies. The developed PI-VM algorithms adopted for practical processing issues such as the control and management of the OLED-display mass production demonstrated savings of approximately 25% of the yield loss over the past 5 years. This improvement was achieved with the development of FDC (fault detection and classification) and APC (advanced process control) logic, which can be developed through the analysis of the physical characteristics of the feature parameters used in PI-VM with the evaluation of their contributions and their correlations to the processing results. PI-VM provides leverage that can be applied in the development of process equipment and factory automation technologies.

연도 저널명 제목 조회 수
2024  Plasma Physics and Controlled Fusion  Data-driven plasma science based plasma etching process design in OLED mass production referring to PI-VM file 222
2024  Physics of Plasmas  Micro-range uniformity control of the etching profile in the OLED display mass production referring to the PI-VM model file 252
2024  Current Applied Physics  Analysis of electron thermal properties in Ar/O2 inductively coupled plasmas: A global model simulation using Langmuir probe data 265
2024  Fusion Engineering and Design  Sputtering yield increase with fluence in low-energy argon plasma-tungsten interaction file 511
2024  Journal of the Korean Physical Society  Macrocrack propagation with grain growth on transient heat loaded tungsten file 650
2024  Physics of Plasmas  Plasma heating characterization of the large area inductively coupled plasma etchers with the plasma information for managing the mass production file 728
2024  Current Applied Physics  Observation of the floating sheath distribution on Al2O3 and silicon targets adjacent to a DC biased metal substrate 836
2024  IEEE Transactions on Semiconductor Manufacturing  Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma 931
2024  IEEE Transactions on Semiconductor Manufacturing  Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma 931
2022  Current Applied Physics  Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma 759
2022  Journal of Alloys and Compounds  Competitive roles of dislocations on blister formation in polycrystalline pure tungsten file 950
2022  Journal of the Korean Physical Society  Plasma Information-based virtual metrology (PI-VM) and mass production process control file 1611
2022  Physics of Plasma  2022 Review of Data-Driven Plasma Science file 1632
2022  Plasma Sources Science and Technology  Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma file 1903
2021  Journal of the Korean Physical Society  Phenomenology-based Model Predictive Control of Electron Density in Ar/SF6 Capacitively Coupled Etch Plasma 633

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