연도 저널명 제목 조회 수
2019  Scientific Reports  Quantitation of the ROS production in plasma and radiation treatments of biotargets 935
2016  Journal of the Korean Physical Society  Observation of Oversaturation-Induced Defect Formation in Tungsten Irradiated by Low Energy Deuterium Ion 947
2015  Physics of Plasmas  Global model analysis of negative ion generation in low-pressure inductively coupled hydrogen plasmas with bi-Maxwellian electron energy distributions 1006
2019  반도체디스플레이기술학회지  플라즈마 정보인자를 활용한 SiO2 식각 깊이 가상 계측 모델의 특성 인자 역할 분석 1106
2019  Plasma Physics and Controlled Fusion  Application of of PI-VM for management of the metal target plasma etching processes in OLED display manufacturing 1113
2019  Journal of Periodontal & Implant Science  The bactericidal effect of an atmospheric-pressure plasma jet on Porphyromonas gingivalis biofilms on sandblasted and acid-etched titanium discs 1115
2016  Metals and Materials International  High-Temperature Thermo-Mechanical Behavior of Functionally Graded Materials Produced by Plasma Sprayed Coating: Experimental and Modeling Results 1120
2014  IEEE TRANSACTIONS ON PLASMA SCIENCE  Characteristics of OH* Generation in Pin-to-Electrolyte Discharges 1138
2017  Physics of Plasmas  Bullet-to-streamer transition on the liquid surface of a plasma jet in atmospheric pressure 1180
2015  IEEE TRANSACTIONS ON PLASMA SCIENCE  Bullet Velocity Distribution of a Helium Atmospheric-Pressure Plasma Jet in Various N2/O2 Mixed Ambient Conditions 1210
2015  Journal of Nuclear Materials  Recrystallization of Bulk and Plasma-Coated Tungsten with Accumulated Thermal Energy Relevant to Type-I ELM in ITER H-Mode Operation 1240
2019  Plasma Processes and Polymers  Cause Analysis of the Faults in HARC Etching Processes by Using the PI-VM Model for OLED Display Manufacturing 1311
2015  Fusion Science and Technology  Characterization of Two–Radiofrequency–Driven Dual Antenna Negative Hydrogen Ion Sources 1360
2014  반도체디스플레이기술학회지  이중 주파수 전원의 용량성 결합 플라즈마 식각장비에서 전극하전에 의한 입사이온 에너지분포 변화연구 1458
2021  Materials  Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma 1661

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