2019 | Plasma Physics and Controlled Fusion |
Application of of PI-VM for management of the metal target plasma etching processes in OLED display manufacturing
| 1112 |
1995 | Physics of Plasmas |
Magnetic and Collisional Effects on Presheaths
| 5964 |
1998 | Physics of Plasmas |
Azimuthally Symmetric Pseudosurface and Helicon Wave Propagation in an Inductively Coupled Plasma at Low Magnetic Field
| 7625 |
2007 | Physics of Plasmas |
Variation of plasma parameters on boundary conditions in an inductively coupled plasma source for hyperthermal neutral beam generation
| 5176 |
2015 | Physics of Plasmas |
Global model analysis of negative ion generation in low-pressure inductively coupled hydrogen plasmas with bi-Maxwellian electron energy distributions
| 1005 |
2017 | Physics of Plasmas |
Bullet-to-streamer transition on the liquid surface of a plasma jet in atmospheric pressure
| 1180 |
2020 | Physics of Plasmas |
Predictive Control of the Plasma Processes in the OLED Display Mass Production Referring to the Discontinuity Qualifying PI-VM
| 3789 |
1999 | Physics of Plasma |
Ion sheath expansion for a target voltage with a finite risetime
| 8615 |
2022 | Physics of Plasma |
2022 Review of Data-Driven Plasma Science
| 804 |
2017 | Nuclear Fusion |
Enhancement of deuterium retention in damaged tungsten by plasma induced defect clustering
| 3523 |
2016 | Metals and Materials International |
High-Temperature Thermo-Mechanical Behavior of Functionally Graded Materials Produced by Plasma Sprayed Coating: Experimental and Modeling Results
| 1091 |
2021 | Materials |
Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma
| 1658 |
2004 | Key Engineering Materials |
Measurement of Monodisperse Particle Charge in DC Plasma
| 6273 |
1993 | Journal of Vacuum Science & Technology |
Role of contaminants in electron cyclotron resonance plasmas
| 5385 |
1993 | Journal of Vacuum Science & Technology |
Two-Dimensional Mapping of Plasma Parameters Using Probes in an Electron Cyclotron Resonance Etching Device
| 4601 |