2006 | Japanese Journal of Applied Physics |
Investigation of Current on the Conducting Target Biased with a Large Negative Potential in the Non-Uniform Plasma
| 4536 |
2006 | Journal of the Korean Physical Society |
Capacitance Between an Atmospheric Discharge Plasma and the Dielectric Electrode in the Parallel Cell Reactor
| 6535 |
2006 | Journal of the Korean Physical Society |
Optimum Operating Frequency of an Atmospheric-Pressure Dielectric-Barrier Discharge for the Photo-Resistor Ashing Process
| 7306 |
2006 | Journal Of The Korean Physical Society |
Plasma Density Monitoring Based on the Capacitively- and Inductively-Coupled-Plasma Models
| 5697 |
2006 | 한국진공학회지 |
PSII 펄스 시스템의 동적 플라즈마 부하 회로 모델 개발
| 8453 |
2004 | Plasma Science, IEEE Transactions on |
Analysis of Langmuir Probe Data Using Wavelet Transform
| 4134 |
2004 | Key Engineering Materials |
Measurement of Monodisperse Particle Charge in DC Plasma
| 6273 |
2004 | Surface and Coatings Technology |
Time-resolved plasma measurement in a high-power pulsed ICP source for large area
| 4509 |
2002 | Surface and Coatings Technology |
The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation
| 5364 |
2002 | Journal of Applied Physics |
Measurement of expanding plasma sheath from a target baised by a negative pulse with a fast rise time
| 103614 |
2001 | Journal of applied physics |
Electrostatic probe diagnostic of a planar type radio-frequency inductively coupled oxgen plasma
| 5650 |
2001 | IEEE Transactions On Plasma Science |
Scaling Characteristics of Plasma Parameters for Low-Pressure Oxygen RF Discharge plasmas
| 4185 |
2001 | Japanese journal of applied physics |
Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate
| 4941 |
2001 | Surface & Coating Technology |
The measurement of nitrogen ion species ratio in the inductively coupled plasma source ion implantation
| 7059 |
2001 | Surface & Coating Technology |
Measurement of sheath expansion in plasma source ion implantation
| 9760 |