연도 2006 
저널명 Japanese Journal of Applied Physics 
 

It was investigated the current on a biased target in the non-uniform plasma. The argon plasma was generated at the low pressure of 0.5–5 mTorr and the stainless steel target was biased with 0.2–6 kV negatively. The target current increases with increasing the target voltage due to the non-uniform plasma distributed near the target, which follows the Child law. The secondary emission current, following the square root of target voltage, is superposed to the ion current. For the higher pressures of larger than 1.5 mTorr, the target current is larger than the expected current of Bohm current plus the secondary emission current. The deviation increases drastically with increasing the operating pressure, which may due to the local ionization near the target. This phenomenon is important to understand more accurately the high voltage sheath formation in practices.


https://doi.org/10.1143/JJAP.45.L686

 

연도 저널명 제목 조회 수
2006  Japanese Journal of Applied Physics  Investigation of Current on the Conducting Target Biased with a Large Negative Potential in the Non-Uniform Plasma 4536
2006  Journal of the Korean Physical Society  Capacitance Between an Atmospheric Discharge Plasma and the Dielectric Electrode in the Parallel Cell Reactor 6535
2006  Journal of the Korean Physical Society  Optimum Operating Frequency of an Atmospheric-Pressure Dielectric-Barrier Discharge for the Photo-Resistor Ashing Process 7306
2006  Journal Of The Korean Physical Society  Plasma Density Monitoring Based on the Capacitively- and Inductively-Coupled-Plasma Models 5697
2006  한국진공학회지  PSII 펄스 시스템의 동적 플라즈마 부하 회로 모델 개발 8453
2004  Plasma Science, IEEE Transactions on  Analysis of Langmuir Probe Data Using Wavelet Transform 4134
2004  Key Engineering Materials  Measurement of Monodisperse Particle Charge in DC Plasma 6273
2004  Surface and Coatings Technology  Time-resolved plasma measurement in a high-power pulsed ICP source for large area 4510
2002  Surface and Coatings Technology  The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation 5364
2002  Journal of Applied Physics  Measurement of expanding plasma sheath from a target baised by a negative pulse with a fast rise time 103678
2001  Journal of applied physics  Electrostatic probe diagnostic of a planar type radio-frequency inductively coupled oxgen plasma 5650
2001  IEEE Transactions On Plasma Science  Scaling Characteristics of Plasma Parameters for Low-Pressure Oxygen RF Discharge plasmas 4185
2001  Japanese journal of applied physics  Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate 4941
2001  Surface & Coating Technology  The measurement of nitrogen ion species ratio in the inductively coupled plasma source ion implantation 7059
2001  Surface & Coating Technology  Measurement of sheath expansion in plasma source ion implantation 9760

Archives


XE Login