연도 | 저널명 | 제목 | 조회 수 |
---|---|---|---|
1993 | Journal of Vacuum Science & Technology | Etching Rate Characterization of SiO2 and Si Using In Energy Flux and Atomic Fluorine Density in a CF4/O2/Ar Electron Cyclotron Resonance Plasma | 5290 |
1992 | Plasma Sources Science & Technology | Measurements of the presheath in an electron cyclotron resonance etching device | 4630 |
1992 | IEEE Transactions On Plasma Science | Double Layer-Relevant Laboratory Results | 3780 |