The influence of controlled phase shift between very high frequency (100 MHz) voltages applied to the powered electrodes on the plasma uniformity and etch rate was studied in a capacitive triode-type reactor. Radial profiles of plasma optical emission were measured as a function of the phase shift in process (C₄F₈/O₂/Ar) plasma with the low frequency bias power both turned off and on. Radial profiles of KrF photoresist etch rate over a 300 mm wafer were obtained in the same conditions (with the bias power turned on). Besides, plasma density at the wafer center and edge was measured versus the phase shift in pure Ar plasma. It occurred that all measured characteristics strongly depend on the phase shift and correlate with each other. It has been shown that the phase-shift control can considerably improve both the plasma and etch-rate uniformity in very high-frequency capacitive reactors.

http://dx.doi.org/10.1063/1.3176496