2024 | Current Applied Physics |
Observation of the floating sheath distribution on Al2O3 and silicon targets adjacent to a DC biased metal substrate
| 63 |
2022 | Journal of Alloys and Compounds |
Competitive roles of dislocations on blister formation in polycrystalline pure tungsten
| 437 |
2022 | Physics of Plasma |
2022 Review of Data-Driven Plasma Science
| 804 |
2022 | Plasma Sources Science and Technology |
Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma
| 394 |
2022 | Journal of the Korean Physical Society |
Plasma Information-based virtual metrology (PI-VM) and mass production process control
| 673 |
2022 | Current Applied Physics |
Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma
| 265 |
2021 | Materials |
Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma
| 1658 |
2021 | Atoms |
Population Kinetics Modeling of Low-Temperature Argon Plasma
| 648 |
2021 | Journal of the Korean Physical Society |
Phenomenology-based Model Predictive Control of Electron Density in Ar/SF6 Capacitively Coupled Etch Plasma
| 321 |
2021 | Current Applied Physics |
Development of Model Predictive Control of Fluorine Density in SF6/O2/Ar Etch Plasma by Oxygen Flow Rate
| 441 |
2021 | 반도체디스플레이기술학회지 |
VHF-CCP 설비에서 Ar/SF6 플라즈마 분포가 Si 식각 균일도에 미치는 영향 분석
| 800 |
2020 | Physics of Plasmas |
Predictive Control of the Plasma Processes in the OLED Display Mass Production Referring to the Discontinuity Qualifying PI-VM
| 3789 |
2019 | Plasma Processes and Polymers |
Cause Analysis of the Faults in HARC Etching Processes by Using the PI-VM Model for OLED Display Manufacturing
| 1307 |
2019 | Plasma Physics and Controlled Fusion |
Application of of PI-VM for management of the metal target plasma etching processes in OLED display manufacturing
| 1112 |
2019 | Current Applied Physics |
Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth
| 625 |