The influence of the phase shift between rf voltages applied to the powered electrodes on plasma parameters and etch characteristics was studied in a very high-frequency (VHF) capacitively coupled plasma (CCP) triode reactor. rf voltages at 100 MHz were simultaneously applied to the top and bottom electrodes having a controlled phase shift between them, which could be varied between 0° and 360°. Several plasma and process characteristics were measured as a function of the phase shift: (i) radial profiles of plasma-emission intensity, (ii) line-of-sight averaged plasma-emission intensity, and (iii) radial profiles of blanket SiO₂ etching rate over a 300 mm wafer. Radial profiles of plasma emission were obtained using the scanning optical probe. It has been shown that all the measured characteristics strongly depend on the phase shift: (i) plasma-emission intensity is minimal at phase shift equal to 0° and maximal at 180° for all radial positions, while the emission radial profile changes from bell-shaped distribution with considerable nonuniformity at 0° to a much more flattened distribution at 180°; (ii) line-of-sight averaged plasma-emission intensity shows a similar dependence on the phase shift with minimum and maximum at 0° and 180°, respectively; and (iii) the etch-rate radial profile at 180° shows a much better uniformity as compared to that at 0°. Some of these results can be qualitatively explained by the redistribution of plasma currents that flow between the electrodes and also from the electrodes to the grounded wall with the phase shift. We suggest that the phase-shift effect can be used to improve the plasma and etch-rate spatial uniformity in VHF-CCP triode reactors.

http://dx.doi.org/10.1116/1.3010717