연도 2022 
저널명 Plasma Sources Science and Technology 

DOI : 추가 예정 (accept)

 

Authors : Haneul Lee, Nam-Kyun Kim, Myeong-Geon Lee, Ji-Won Kwon, Sung Hyun Son, Namjae Bae, Taejun Park, Seolhye Park and Gon-Ho Kim

 

Abstract :

The effects of ion collisions on plasma-sheath formation are investigated experimentally for a low-density and low-pressure discharge. The space potential and ion velocity distribution measurements at high spatial resolution show that the ion collision properties observed in the presheath are maintained in the plasma-sheath transition region. The potential drop in the transition region indicates the existence of ionization as an effect of ion collisions in the transition region owing to the non-negligible density of the electrons penetrating the sheath. Based on comparisons between the space potential measurements and Riemann's presheath-sheath transition solution, the ion collision length λ_i was determined as a key parameter in the presheath and transition region. And it represents that the thermal properties of ions and neutral gases affects space potential by the charge exchange and ionization collisions. The existence of the ion collision effect in the transition region suggests possible influence on the incident conditions of ions and electrons near the sheath edge. Consequently, the energy distributions of ions and electrons incident on the material surface facing the sheath are sensitive to the collisionality and operating conditions.

연도 저널명 제목 조회 수
2024  Current Applied Physics  Observation of the floating sheath distribution on Al2O3 and silicon targets adjacent to a DC biased metal substrate 7540
2024  Physics of Plasmas  Plasma heating characterization of the large area inductively coupled plasma etchers with the plasma information for managing the mass production file 1330
2024  Journal of the Korean Physical Society  Macrocrack propagation with grain growth on transient heat loaded tungsten file 3922
2024  Fusion Engineering and Design  Sputtering yield increase with fluence in low-energy argon plasma-tungsten interaction file 1689
2024  IEEE Transactions on Semiconductor Manufacturing  Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma 1351
2024  IEEE Transactions on Semiconductor Manufacturing  Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma 1351
2024  Plasma Physics and Controlled Fusion  Data-driven plasma science based plasma etching process design in OLED mass production referring to PI-VM file 514
2024  Physics of Plasmas  Micro-range uniformity control of the etching profile in the OLED display mass production referring to the PI-VM model file 3551
2024  Current Applied Physics  Analysis of electron thermal properties in Ar/O2 inductively coupled plasmas: A global model simulation using Langmuir probe data 1609
2022  Journal of Alloys and Compounds  Competitive roles of dislocations on blister formation in polycrystalline pure tungsten file 1269
2022  Physics of Plasma  2022 Review of Data-Driven Plasma Science file 2864
2022  Plasma Sources Science and Technology  Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma file 2047
2022  Journal of the Korean Physical Society  Plasma Information-based virtual metrology (PI-VM) and mass production process control file 1937
2022  Current Applied Physics  Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma 1003
2021  Materials  Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma 2382

Archives


XE Login