연도 2024 
저널명 Plasma Physics and Controlled Fusion 
1-22 

Abstract


The production efficiencies of organic light emitting diode (OLED) displays and semiconductor manufacturing have been dramatically improving with the help of plasma physics and engineering technology by utilizing a process monitoring methodology based on physical domain knowledge. This domain knowledge consists of plasma-heating and sheath physics, plasma chemistry, and plasma-material surface reaction kinetics. They were applied to the plasma information based virtual metrology (PI-VM) algorithm with the plasma diagnostics and noticeably enhanced process prediction performance by parameterizing plasma information (PI) in various processes of OLED display and semiconductor manufacturing fabs. PI-VM has shown superior process prediction accuracy, which can trace the states of processing plasmas as an application of data-driven plasma science compared to the classical statistics and machine learning-based virtual metrologies; thus, various plasma processes have been managed and controlled with the help of the PI-VM models. More than this, we have adopted the PI-VM model to optimize the patterning architecture and plasma processes simultaneously. The best combination of the etching pattern structure and plasma condition was adjustable based on the detailed understanding of the angular distribution of sputtered atoms from the etching target surface and their interaction with the plasma sheath based on the PI-VM modeling for etching profile failure prediction

 

doi : https://doi.org/10.1088/1361-6587/ad1ae5

연도 저널명 제목 조회 수
2024  Current Applied Physics  Observation of the floating sheath distribution on Al2O3 and silicon targets adjacent to a DC biased metal substrate 7540
2024  Physics of Plasmas  Plasma heating characterization of the large area inductively coupled plasma etchers with the plasma information for managing the mass production file 1330
2024  Journal of the Korean Physical Society  Macrocrack propagation with grain growth on transient heat loaded tungsten file 3922
2024  Fusion Engineering and Design  Sputtering yield increase with fluence in low-energy argon plasma-tungsten interaction file 1689
2024  IEEE Transactions on Semiconductor Manufacturing  Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma 1351
2024  IEEE Transactions on Semiconductor Manufacturing  Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma 1351
2024  Plasma Physics and Controlled Fusion  Data-driven plasma science based plasma etching process design in OLED mass production referring to PI-VM file 514
2024  Physics of Plasmas  Micro-range uniformity control of the etching profile in the OLED display mass production referring to the PI-VM model file 3551
2024  Current Applied Physics  Analysis of electron thermal properties in Ar/O2 inductively coupled plasmas: A global model simulation using Langmuir probe data 1609
2022  Journal of Alloys and Compounds  Competitive roles of dislocations on blister formation in polycrystalline pure tungsten file 1269
2022  Physics of Plasma  2022 Review of Data-Driven Plasma Science file 2864
2022  Plasma Sources Science and Technology  Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma file 2047
2022  Journal of the Korean Physical Society  Plasma Information-based virtual metrology (PI-VM) and mass production process control file 1937
2022  Current Applied Physics  Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma 1003
2021  Materials  Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma 2382

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