연도 2018 
저널명 IEEE Transactions on Semiconductor Manufacturing 
232-241 
Abstract—A phenomenological-based virtual metrology (VM) technique is developed for predicting the silicon nitride film thickness in multi-layer plasma-enhanced chemical vapor deposition (PECVD). Particularly, the analysis of optical emission spectroscopy based on the excitation kinetics in nitrogen plasma is used to develop novel variables, named plasma-information (PI) variables. One variable, PIWall, is determined by analyzing the light transmittances of the nitrogen emissions at the contaminated window, representing the drift of reactor-wall condition. The other variable, PIVolume, is determined by analyzing vibrational distribution of N2(C, ν = 0 − 4) states, representing the drift of plasma density and temperature. These PI variables are applied as part of input variables of VM to improve the prediction accuracy. The partial least squares regression is adopted as the statistical method and the contribution of PI variables on the VM are evaluated through the variable influence evaluation on projection. It demonstrates the necessity of PI variables in VM for PECVD and the reactor-wall condition is a major cause of drift in PECVD.

연도 저널명 제목 조회 수
2024  Plasma Physics and Controlled Fusion  Data-driven plasma science based plasma etching process design in OLED mass production referring to PI-VM file 212
2024  Current Applied Physics  Analysis of electron thermal properties in Ar/O2 inductively coupled plasmas: A global model simulation using Langmuir probe data 231
2024  Physics of Plasmas  Micro-range uniformity control of the etching profile in the OLED display mass production referring to the PI-VM model file 238
2024  Fusion Engineering and Design  Sputtering yield increase with fluence in low-energy argon plasma-tungsten interaction file 500
2024  Journal of the Korean Physical Society  Macrocrack propagation with grain growth on transient heat loaded tungsten file 636
2024  Physics of Plasmas  Plasma heating characterization of the large area inductively coupled plasma etchers with the plasma information for managing the mass production file 705
2024  Current Applied Physics  Observation of the floating sheath distribution on Al2O3 and silicon targets adjacent to a DC biased metal substrate 773
2024  IEEE Transactions on Semiconductor Manufacturing  Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma 875
2024  IEEE Transactions on Semiconductor Manufacturing  Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma 875
2022  Current Applied Physics  Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma 725
2022  Journal of Alloys and Compounds  Competitive roles of dislocations on blister formation in polycrystalline pure tungsten file 947
2022  Journal of the Korean Physical Society  Plasma Information-based virtual metrology (PI-VM) and mass production process control file 1592
2022  Physics of Plasma  2022 Review of Data-Driven Plasma Science file 1614
2022  Plasma Sources Science and Technology  Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma file 1900
2021  Journal of the Korean Physical Society  Phenomenology-based Model Predictive Control of Electron Density in Ar/SF6 Capacitively Coupled Etch Plasma 611

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