| 2024 | Current Applied Physics |
Observation of the floating sheath distribution on Al2O3 and silicon targets adjacent to a DC biased metal substrate
| 7540 |
| 2024 | Physics of Plasmas |
Plasma heating characterization of the large area inductively coupled plasma etchers with the plasma information for managing the mass production
 | 1330 |
| 2024 | Journal of the Korean Physical Society |
Macrocrack propagation with grain growth on transient heat loaded tungsten
| 3922 |
| 2024 | Fusion Engineering and Design |
Sputtering yield increase with fluence in low-energy argon plasma-tungsten interaction
| 1689 |
| 2024 | IEEE Transactions on Semiconductor Manufacturing |
Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma
| 1351 |
| 2024 | IEEE Transactions on Semiconductor Manufacturing |
Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma
| 1351 |
| 2024 | Plasma Physics and Controlled Fusion |
Data-driven plasma science based plasma etching process design in OLED mass production referring to PI-VM
| 514 |
| 2024 | Physics of Plasmas |
Micro-range uniformity control of the etching profile in the OLED display mass production referring to the PI-VM model
| 3551 |
| 2024 | Current Applied Physics |
Analysis of electron thermal properties in Ar/O2 inductively coupled plasmas: A global model simulation using Langmuir probe data
| 1609 |
| 2022 | Journal of Alloys and Compounds |
Competitive roles of dislocations on blister formation in polycrystalline pure tungsten
| 1281 |
| 2022 | Physics of Plasma |
2022 Review of Data-Driven Plasma Science
| 2864 |
| 2022 | Plasma Sources Science and Technology |
Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma
| 2047 |
| 2022 | Journal of the Korean Physical Society |
Plasma Information-based virtual metrology (PI-VM) and mass production process control
| 1938 |
| 2022 | Current Applied Physics |
Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma
| 1003 |
| 2021 | Materials |
Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma
| 2382 |
